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VO2 Thin-Film Varistor Based on Metal-Insulator Transition
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- Authors
- Bong-Jun Kim, Yong Wook Lee, Sungyoul Choi, Sun Jin Yun, Hyun-Tak Kim
- Issue Date
- 2010-01
- Citation
- IEEE Electron Device Letters, v.31, no.1, pp.14-16
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- For electronic applications, we have fabricated VO2 thin-film variable resistors (varistors) using metal-insulator transition regarded as the abrupt current jump. The increase of the number of parallel stripe patterns in the varistor leads to the increase in current below a current-jump voltage, which endures a high surge voltage with high current and short rising time. Electrostatic discharge (ESD) experiments show that the varistic coefficient of 500 is larger than 3080, which is known for commercial ZnO varistors. In overvoltage-protection tests applying high ESD voltages up to 3.3 kV to a varistor, the maximum response voltage is lower than 200 V at an ESD voltage of 1600 V, and the electronic response time is less than 20 ns. This is sufficient to protect a device perfectly. © 2006 IEEE.
- KSP Keywords
- Commercial ZnO, Electro Static Discharge(ESD), High Current, Rising time, Stripe patterns, Surge Voltage, ZnO varistors, metal-insulator transition, response time, thin film(TF)