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Pt 기반의 쇼트키 접촉을 갖는 AlGaN/GaN HEMTs on SiC 의 특성
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- Authors
- Hyung Sup Yoon, Byung Gue Min, Ho Kyuu Ahn, Jong Min Lee, Dong Min Kang, Sung Il Kim, Chul Won Ju, Hae Cheon Kim, Jong Won Lim
- Issue Date
- 2014-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2014, pp.1-1
- Language
- Korean
- Type
- Conference Paper
- Abstract
- AlGaN/GaN HEMTs on SiC have attracted a lot of attention owing to their promising advantages in high power and high frequency applications. The widely used Ni-based Schottky contacts are subjective to degradation under extremely operating conditions[1-2]. In this work, we fabricated the AlGaN/GaN HEMTs on SiC with 0.17 µm T-shaped gate using Schottky contacts of multi-layered Pt/Ti/Pt/Au. The HEMT epitaxial layers consisted of a thick buffer, 2 µm GaN, a 25 nm undoped Al 0.25 Ga 0.75 N Schottky layer on SiC grown using MOCVD. Ohmic contacts were achieved by Ti/Al/Ni/Au evaporation and RTA. The device isolation was formed by ion implantation. Pt/Ti/Pt/Au multi-layered Schottky metal contacts with T-shaped gate of 0.15 µm gate length were fabricated by electron-beam lithography. The devices had a gate width of 200 µm and a source-drain spacing of 5 μm. The devices showed the good pinch-off characteristics. The threshold voltage was – 2.52 V. The extrinsic transconductance was 250 mS/mm at a gate bias of -1.0 V and a drain bias of 10 V. The three-terminal breakdown voltage was 140 V at drain current of 1 mA/mm and gate bias of – 5 V. RF measurement shows that these devices have a fT of 56 GHz and fMAX of 200 GHz. These results will be usefully applied for high frequency and high power applications.
- KSP Keywords
- 200 GHz, 5 nm, 6 GHz, AND gate, AlGaN/GaN HEMTs, Breakdown Voltage, Device isolation, Drain current, Electron beam lithography, Epitaxial layer, Gate Width