상세정보
학술지
Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures
- 발행일
- 201011
- 출처
- Advanced Materials, v.22 no.44, pp.5058-5062
- ISSN
- 0935-9648
- 출판사
- John Wiley & Sons
- 협약과제
- 10ZC1100, 메가컨버전스 핵심기술 개발, 함호상
- 초록
- The light output power and wall-plug efficiency of the Si nanocrystal (nc-Si) light-emitting diode (LED) were significantly enhanced by employing the multiple-luminescent structures. This improvement was attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc-Si due to the band offset between the luminescent layer and barrier layer. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- KSP 제안 키워드
- Barrier layers, Co. KGaA, Emission Efficiency, Light Emission, Light output power(Lop), Nc-Si, Si nanocrystal, Silicon nanocrystals(Si NCs), Wall-plug efficiency, band offset, luminescent layer