BROWSE
Detail
Journal Article
Mechanically Flexible Thin Film Transistors and Logic Gates on Plastic Substrates by Use of Single-Crystal Silicon Wires from Bulk Wafers
Cited 21 time in 
Share 
Share
- Authors
- Seoung-Ki Lee, Houk Jang, Musarrat Hasan, Jae Bon Koo, Jong-Hyun Ahn
- Issue Date
- 2010-04
- Citation
- Applied Physics Letters, v.96, no.17, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2 /V s, subthreshold voltage of 100 mV/dec and on/off ratios > 107. The inverter shows good performance and voltage gains of ~2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems. © 2010 American Institute of Physics.
- KSP Keywords
- 3 V, AND logic gates, Electrical Measurements, Electronic system, High performance, ON/OFF ratio, Plastic substrate, Single-crystal silicon, Supply voltage, Thin-Film Transistor(TFT), dry transfer