상세정보
학술지
Modified Ion Sensitive Field Effect Transistor Sensors having an Extended Gate on a Thick Dielectric
- 발행일
- 201005
- 출처
- Applied Physics Letters, v.96 no.20, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- Modified ion sensitive field effect transistors having an extended gate (EG) on a thick dielectric have been developed to obtain extremely high sensitivity. The capacitance of the EG is controlled to be very small via the thickness of the dielectric layer so that it may be ignored when compared with the gate capacitance of the transistor. As a result, the gate voltage can be fully dependent on the surface charge of the EG. When microalbumin protein of concentration 1 μg/ml on a monoclonal antibody of a microalbumin surface of the EG is injected, an extremely high sensitivity of 1800% is observed. © 2010 American Institute of Physics.
- KSP 제안 키워드
- Extended gate, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Gate capacitance, High Sensitivity, Ion Sensitive Field Effect Transistor, Monoclonal antibody(MAb), dielectric layer, gate voltage, zeta potential(Surface charge)