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학술지 Modified Ion Sensitive Field Effect Transistor Sensors having an Extended Gate on a Thick Dielectric
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저자
안창근, 김안순, 박찬우, 아칠성, 양종헌, 김태엽, 장문규, 성건용
발행일
201005
출처
Applied Physics Letters, v.96 no.20, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3431296
초록
Modified ion sensitive field effect transistors having an extended gate (EG) on a thick dielectric have been developed to obtain extremely high sensitivity. The capacitance of the EG is controlled to be very small via the thickness of the dielectric layer so that it may be ignored when compared with the gate capacitance of the transistor. As a result, the gate voltage can be fully dependent on the surface charge of the EG. When microalbumin protein of concentration 1 μg/ml on a monoclonal antibody of a microalbumin surface of the EG is injected, an extremely high sensitivity of 1800% is observed. © 2010 American Institute of Physics.
KSP 제안 키워드
Extended gate, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Gate capacitance, High Sensitivity, Ion Sensitive Field Effect Transistor, Monoclonal antibody(MAb), dielectric layer, gate voltage, zeta potential(Surface charge)