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Conference Paper
Fault Detection and Isolation of Multiple Defects in Through Silicon Via (TSV) Channel
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- Authors
- Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Joungho Kim, Hyun-Cheol Bae, Kwang-Seong Choi
- Issue Date
- 2014-12
- Citation
- International 3D Systems Integration Conference (3DIC) 2014, pp.1-5
- Language
- English
- Type
- Conference Paper
- Abstract
- Through silicon via (TSV) based 3D-IC is the key technology to satisfy the continuously growing demand on lower power consumption, higher system bandwidth and smaller form factor of electronic devices. As the I/O count increases up to the order of tens of thousands for high speed data transmission, TSV diameter and interconnection pitch are reduced, which may cause various defects throughout the channel. In this paper, we present a fault detection and isolation method for multiple defects in TSV channel by analyzing the electrical characteristics in frequency- and time-domain. In TSV channels with 5-layer stacked dies, open and short defects are intentionally inserted in different locations and the electrical characteristics are analyzed by 3D FEM solver simulation. The type of defects can be distinguished by S21 magnitude; by comparing S11 and S22 magnitude curves, the location of defects can be localized.
- KSP Keywords
- 3-dimensional finite element method(3-D FEM), 3D-IC, Data transmission, Different locations, Electrical characteristics, Fault Detection and Isolation, Form factor, High speed data, Isolation method, Key technology, Lower power