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High Performance Solution-processed Indium-free Metal Oxide Thin-film Transistors
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- Authors
- Sooji Nam, Jong-Heon Yang, Sung Haeng Cho, Jihun Choi, Chi-Sun Hwang
- Issue Date
- 2016-08
- Citation
- International Meeting on Information Display (IMID) 2016, pp.188-188
- Language
- English
- Type
- Conference Paper
- Abstract
- Recently, solution-processed metal oxide thin film transistors (TFTs) have attracted great attention due to their potential applications in low cost, transparent, easily-processable, flexible, and large-area electronic devices. 1 Among the solution-processed metal oxide semiconductors, indium-based oxides have been extensively studied as channel materials for the fabrication of high-performance TFTs. 1-3 Despite good electrical performances of indium-based materials, many research groups have endeavored to develop indium-free high performance oxide semiconductor alternatives since indium is becoming scarce and expensive. Zinc-tin-oxide (ZTO) is one of promising candidates but it requires the high annealing temperature above 500 °C to fully promote the metaloxide-metal condensation, 4 which is incompatible with flexible plastic substrates. Here, we report a facile route to fabricate high performance solution-based indium-free metal oxide TFTs at low temperature of 300 °C by introducing zinc oxide (ZnO)/ tin oxide (SnO 2 ) bilayer as an active channel. With low temperature heat treatment after UV photo-annealing, ZnO/SnO 2 bilayer TFTs exhibit maximum mobility over 15 cm 2 V -1 s -1 . From transmission electron microscopy analysis, we confirm that the improvement of device performance originates from relative Sn-rich zone at the interface between channel and dielectric layer, and Zn-Sn-mixed zone between ZnO and SnO 2 layer. Thin Sn-rich channel plays a key role as a main current path and diffused Zn atoms at Zn-Sn-mixed zone stabilize the device performance. In addition, ZnO/SnO 2 bilayer TFTs show superior operational stability to external gate-bias stress compared to that of ZTO TFTs.
- KSP Keywords
- Active channel, Annealing temperature, Current Path, Electron Microscopy(TEM and SEM), Electronic devices, Facile route, Gate bias stress, Heat treatment, High performance, Indium-free, Key role