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Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
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- 발행일
- 201607
- 출처
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- 협약과제
- 15PB6200, 위성통신용 고출력 GaN SSPA 개발, 안호균
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Surface treatments, enhancement-mode, recessed gate