BROWSE
Detail
Conference Paper
Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
Cited - time in 
Share 
Share
- Authors
- Jae-Won Do, Ho-Kyun Ahn, Hae-Cheon Kim, Hyun-Wook Jung, Min Jeong Shin, Kyu Jun Cho, Sung-Jae Chang, Byoung-Gue Min, Hyoung-Sup Yoon, Dong-Young Kim, Dong-Min Kang, Jong-Min Lee, Seong-Il Kim, Sang-Heung Lee, Woo-Jin Chang, HongGu Ji, Eun-Soo Nam, Jong-Won Lim
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- AlGaN/GaN HEMTs, Enhancement mode(E-mode), Surface treatments, recessed gate