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Journal Article Postfabrication Trimming of CMOS-Compatible Athermal MZI by Thermal Annealing
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Authors
Jong-Moo Lee, Min-su Kim, Maryse Fournier, Pierre Labeye, Claudio J. Oton, Francesco Testa
Issue Date
2016-02
Citation
IEEE/OSA Journal of Lightwave Technology, v.34, no.4, pp.1288-1292
ISSN
0733-8724
Publisher
IEEE, OSA
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/JLT.2016.2515102
Abstract
CMOS-compatible athermal MZI is postfabrication trimmed in wavelength from -0.15 to -5.15 nm using thermal annealing process from 400 to 530 °C. The MZI filter shows temperature dependence less than 2 pm/°C and the temperature dependence is maintained after the annealing process.
KSP Keywords
5 nm, CMOS-compatible, Thermal annealing, annealing process, temperature dependence