상세정보
학술지
Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application
- 발행일
- 201604
- 출처
- ETRI Journal, v.38 no.2, pp.244-251
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 15ZB1600, SiC 기반 트렌치형 차세대 전력소자 핵심기술 개발, 김상기
- 초록
- In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage (VF) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diodelike properties, such as a high VF, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.
- KSP 제안 키워드
- Design considerations, Forward voltage, Minority carrier, PN junction diode, Power system application, Recovery current, Reverse leakage current, electrical characteristics, electrical properties(I-V curve), reverse recovery, trench gate