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Journal Article
Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application
- Authors
- Jong Il Won, Kun Sik Park, Doo Hyung Cho, Jin Gun Koo, Sang Gi Kim, Jin Ho Lee
- Issue Date
- 2016-04
- Citation
- ETRI Journal, v.38, no.2, pp.244-251
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage (VF) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diodelike properties, such as a high VF, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.
- KSP Keywords
- Design considerations, Electrical characteristics, Electrical properties, Forward voltage, Minority carrier, PN junction diode, Power system application, Recovery current, Reverse leakage current, Reverse recovery, trench gate