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Photo-patternable High-k ZrOx Dielectrics Prepared using Zirconium Acrylate for Low-voltage-operating Organic Complementary Inverters
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- Authors
- Yong Jin Jeong, Dong-Jin Yun, Sooji Nam, Eui Hyun Suh, Chan Eon Park, Tae Kyu An, Jaeyoung Jang
- Issue Date
- 2016-06
- Citation
- Organic Electronics, v.33, pp.40-47
- ISSN
- 1566-1199
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Solution-processed dielectric materials with a high dielectric constant (k) have attracted considerable attention due to their potential applications in low-voltage-operating organic field-effect transistors (OFETs) for realizing large-area and low-power electronic devices. In terms of device commercialization, the patterning of each film component via a facile route is an important issue. In this study, we introduce a photo-patternable precursor, zirconium acrylate (ZrA), to fabricate photo-patterned high-k zirconium oxide (ZrOx) dielectric layers with UV light. Solution-processed ZrA films were effectively micro-patterned with UV exposure and developing, and transitioned to ZrOx through a sol-gel reaction during deep-UV annealing. The UV-assisted and ~10 nm-thick ZrOx dielectric films exhibited a high capacitance (917.13 nF/cm2 at 1 KHz) and low leakage current density (10-7 A/cm2 at 1.94 MV/cm). Those films could be utilized as gate dielectric layers of OFETs after surface modification with ultrathin cyclic olefin copolymer layers. Finally, we successfully fabricated organic complementary inverters exhibiting hysteresis-free operation and high voltage gains of over 42 at low voltages of ?돞3 V.
- KSP Keywords
- Copolymer layers, Deep UV, Dielectric films, Dielectric materials, Facile route, Field Effect Transistor(FET), High Voltage, High capacitance, High dielectric constant, High-k zirconium oxide, Low leakage current density