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InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity
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- Authors
- Ji Hun Choi, Jong-Heon Yang, Sooji Nam, Jae-Eun Pi, Hee-Ok Kim, Oh-Sang Kwon, Eun-Suk Park, Chi-Sun Hwang, Sung Haeng Cho
- Issue Date
- 2016-10
- Citation
- IEEE Electron Device Letters, v.37, no.10, pp.1295-1298
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- In this letter, high-performance InZnO/AlSnZnInO (IZO/ATZIO) bilayer thin-film transistors (TFTs) with an inverted staggered back channel etch structure are presented. The channel width and the length were both 6μm, which is small enough to be adapted to a high-resolution display backplane. High field-effect mobility (μFE) over 60 cm2/Vs was obtained from the structure with 8-nm IZO channel insertion between the gate dielectric and the ATZIO layer. The device shows good controllability in light of TFT operation. The subthreshold slope, turn-ON voltage (VON), and ON/OFF ratio were 0.16 V/decade, -1.52 V, and 5× 109, respectively.
- KSP Keywords
- Channel Width, High performance, High resolution, High uniformity, Inverted staggered, ON/OFF ratio, Subthreshold slope(SS), Thin-Film Transistor(TFT), Turn-on voltage, back channel, gate dielectric