상세정보
학술지
InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity
- 발행일
- 201610
- 출처
- IEEE Electron Device Letters, v.37 no.10, pp.1295-1298
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 15MR8100, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
- 초록
- In this letter, high-performance InZnO/AlSnZnInO (IZO/ATZIO) bilayer thin-film transistors (TFTs) with an inverted staggered back channel etch structure are presented. The channel width and the length were both 6μm, which is small enough to be adapted to a high-resolution display backplane. High field-effect mobility (μFE) over 60 cm2/Vs was obtained from the structure with 8-nm IZO channel insertion between the gate dielectric and the ATZIO layer. The device shows good controllability in light of TFT operation. The subthreshold slope, turn-ON voltage (VON), and ON/OFF ratio were 0.16 V/decade, -1.52 V, and 5× 109, respectively.
- KSP 제안 키워드
- Channel Width, High Mobility, High performance, High-resolution, Inverted staggered, Subthreshold slope(SS), Thin-Film Transistor(TFT), Turn-on voltage, back channel, gate dielectric, high field-effect mobility