상세정보
학술지
AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss
- 발행일
- 201610
- 출처
- ETRI Journal, v.38 no.5, pp.972-980
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 초록
- An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-m AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Langecouplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.
- KSP 제안 키워드
- 18 GHz, 6 GHz, Balanced design, Feedback Circuit, GaN technology, High power amplifier(HPA), Power added efficiency(PAE), Return loss(RL), Saturated output power, Shunt Feedback, Ultra-Wide Band(UWB)