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학술지 AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss
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저자
정진철, 장동필, 신동환, 염인복, 김재덕, 이왕용, 이창훈
발행일
201610
출처
ETRI Journal, v.38 no.5, pp.972-980
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.16.2615.0020
초록
An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-m AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Langecouplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.
키워드
Electronic warfare (ew), Gallium nitride (gan), High power amplifier (hpa), Microwave monolithic integrated circuit (MMIC), Return loss, Wideband
KSP 제안 키워드
18 GHz, 6 GHz, Balanced design, Electronic Warfare, Feedback Circuit, GaN technology, High power amplifier(HPA), Power added efficiency(PAE), Return loss(RL), Saturated output power, Shunt Feedback