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Journal Article
AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss
- Authors
- Jin-Cheol Jeong, Dong-Pil Jang, Dong-Hwan Shin, In-Bok Yom, Jae-Duk Kim, Wang-Youg Lee, Chang-Hoon Lee
- Issue Date
- 2016-10
- Citation
- ETRI Journal, v.38, no.5, pp.972-980
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- Korean
- Type
- Journal Article
- Abstract
- An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25-m AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Langecouplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.
- KSP Keywords
- 18 GHz, 6 GHz, Balanced design, Feedback Circuit, GaN technology, High power amplifier(HPA), Power added efficiency(PAE), Return loss(RL), Saturated output power, Shunt Feedback, Ultra-Wide Band(UWB)