상세정보
학술지
InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
- 발행일
- 201610
- 출처
- Journal of Nanoscience and Nanotechnology, v.16 no.10, pp.10280-10283
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 16MB1100, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- Future stretchable electronic systems require memory devices that combine low power consumption with mechanical stretchability. We fabricated stretchable ferroelectric memory transistors (FMTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) gate insulator. The FMTs exhibited a field-effect mobility of 7.5 cm2V-1s-1 and a current on/off ratio of 107 at a relatively low operating voltage. Furthermore, the fabricated memory transistors showed no noticeable changes in their electrical performance for large strains of up to 50%.
- KSP 제안 키워드
- Amorphous InGaZnO, Electronic systems, First Stokes(S1), Gate insulator, Hybrid substrate, Large strains, Low operating voltage, VDF-TrFE, current on-off ratio, electrical performance, ferroelectric memory