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Journal Article InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
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Authors
Bock Soon Na, Soon-Won Jung, Yu Gyeong Moon, Chan Woo Park, Nae-Man Park, Ji-Young Oh, Sang Seok Lee, Jae Bon Koo, Kyung-Wan Koo
Issue Date
2016-10
Citation
Journal of Nanoscience and Nanotechnology, v.16, no.10, pp.10280-10283
ISSN
1533-4880
Publisher
American Scientific Publishers (ASP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1166/jnn.2016.13144
Abstract
Future stretchable electronic systems require memory devices that combine low power consumption with mechanical stretchability. We fabricated stretchable ferroelectric memory transistors (FMTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) gate insulator. The FMTs exhibited a field-effect mobility of 7.5 cm2V-1s-1 and a current on/off ratio of 107 at a relatively low operating voltage. Furthermore, the fabricated memory transistors showed no noticeable changes in their electrical performance for large strains of up to 50%.
KSP Keywords
Amorphous InGaZnO, Electronic systems, First Stokes(S1), Gate insulator, Hybrid substrate, Large strains, Low operating voltage, VDF-TrFE, current on-off ratio, electrical performance, ferroelectric memory