상세정보
학술지
Antireflection Properties of Al2O3 and AlxTi1-xOy Films on ZnO:Ga Coated Si Wafer for Thin-Film Solar Cell
- 발행일
- 200912
- 출처
- Electrochemical and Solid-State Letters, v.13 no.2, pp.G17-G20
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 09MB5500, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
- 초록
- The antireflection (AR) properties of Al2 O3 and Alx Ti1-x Oy films were investigated for the application of an AR coating of thin-film solar cells. Their optical transmittance was measured to exceed 85% over the entire visible and near-IR spectrum. The AR layers of these films coated on transparent conductive oxide (TCO)/Si exhibited 18% lower reflection than an uncoated TCO/Si at wavelengths from 400 to 900 nm. Furthermore, the thicknesses of the AR layers and TCO were demonstrated to influence the amount and shape of reflectivity in the reflection curves for the AR/TCO/Si structure. © 2009 The Electrochemical Society.
- KSP 제안 키워드
- AR coating, Antireflection properties, IR Spectrum, Near-IR, Optical transmittance, Si wafer, Thin film solar cells, thin film(TF), transparent conductive oxide