ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
Cited 6 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
Authors
Moongyu Jang,  Myungsim Jun, Taehyoung Zyung
Issue Date
2010-08
Citation
Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801
ISSN
2166-2746
Publisher
AVS Science and Technology Society
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1116/1.3457936
Project Code
10MB1600, EPMIC based on self-chargeable power supply module, Kim Jongdae
Abstract
A 20 μm long channel platinum-silicided p -type Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) is manufactured. The manufactured p -type SB-MOSFET shows 60 mV/decade subthreshold swing characteristic with leakage current less than 10-7 μA/μm and on/off current ratio larger than 106. Using this platinum-silicided p -type SB-MOSFET, the effective mobility of hole is extracted for the first time. The extracted effective hole mobility has slightly lower value compared to universal hole mobility. The reason for this is due to the existence of Schottky barrier between platinum-silicided and silicon. © 2010 American Vacuum Society.
KSP Keywords
Barrier Metal, Effective hole mobility, Field-effect transistors(FETs), Leakage current, Long channel, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Mobility characteristics, ON/OFF current ratio, SB-MOSFET, Schottky barrier