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Journal Article
Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
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- Authors
- Moongyu Jang, Myungsim Jun, Taehyoung Zyung
- Issue Date
- 2010-08
- Citation
- Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801
- ISSN
- 2166-2746
- Publisher
- AVS Science and Technology Society
- Language
- English
- Type
- Journal Article
- Abstract
- A 20 μm long channel platinum-silicided p -type Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) is manufactured. The manufactured p -type SB-MOSFET shows 60 mV/decade subthreshold swing characteristic with leakage current less than 10-7 μA/μm and on/off current ratio larger than 106. Using this platinum-silicided p -type SB-MOSFET, the effective mobility of hole is extracted for the first time. The extracted effective hole mobility has slightly lower value compared to universal hole mobility. The reason for this is due to the existence of Schottky barrier between platinum-silicided and silicon. © 2010 American Vacuum Society.
- KSP Keywords
- Barrier Metal, Effective Mobility, Effective hole mobility, Field Effect Transistor(FET), Leakage Current, Long channel, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Mobility characteristics, SB-MOSFET, Schottky barrier