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Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
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- Authors
- Hyung Sup Yoon, Byoung-Gue Min, Jong Min Lee, Dong Min Kang, Ho-Kyun Ahn, Haecheon Kim, Jongwon Lim
- Issue Date
- 2016-11
- Citation
- IEEE Electron Device Letters, v.37, no.11, pp.1407-1410
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- Microwave low-noise performance AlGaN/GaN HEMT on a SiC substrate with a wide head double-deck T-shaped gate has been reported. The HEMTs with gatelength (Lg) of 0.17 μm and source-drain spacing (Lsd) of 3.5 μm exhibited a maximum extrinsic transconductance of 360 mS/mm, a current gain cutoff frequency (fT) of 50 GHz, a maximum oscillation frequency ( fmax) of 149 GHz, and three-Terminal breakdown voltage of 113 V. The device exhibited a minimum noise figure (NFmin) of 0.50 and 0.84 dB at 10 and 18 GHz, respectively, when biased at Vds = 5 V and Ids = 140 mA/mm, which is the lowest noise characteristics ever reported for the GaN-based T-shaped gate HEMTs with gate length larger than 0.1 μm. This excellent noise performance is attributed to the reduction of the gate resistance resulting from a wide head T-shaped gate and the improved device characteristics.
- KSP Keywords
- 18 GHz, 3 V, AlGaN/GaN HEMTs, Breakdown voltage(BDV), Current gain cutoff frequency, Device characteristics, Double-deck, GaN-Based, Gate resistance, Low noise, Minimum noise figure