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Conference Paper
Threshold Voltage Shift of 0.2 μm AlGaN/GaN MISHFET with Fluorinated Gate Dielectric
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- Authors
- Ho-Kyun Ahn, Min Jeong Shin, Hyun-Wook Jung, Hae-Cheon Kim, Dong-Min Kang, Sung-Il Kim, Jong-Min Lee, Byoung-Gue Min, Hyoung-Sup Yoon, Eun-Soo Nam, Jong-Won Lim
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Threshold voltage shift, gate dielectric, threshold voltage(Vth)