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Conference Paper
Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
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- Authors
- Hyung Sup Yoon, Byoung-Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Kyu-Jun Cho, Jae-Won Do, Min Jeong Shin, Hyun-Wook Jung, Sung Il Kim, Hae Cheon Kim, Jong Won Lim
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- AlGaN/GaN HEMTs, Two-Step