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학술대회
Semiconductor-Based Reflector Antenna Using Integrated PIN Diodes
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- 발행일
- 201610
- 출처
- International Symposium on Antennas and Propagation (ISAP) 2016, pp.748-749
- 협약과제
- 16MF1100, 차세대 무선통신용 반도체 기반 스마트 안테나 기술 개발, 박봉혁
- 초록
- This paper presents a semiconductor reflector antenna for use in reconfigurable telecommunication systems. The quasi-metallic reflector characteristic was obtained by formation of high conductivity plasma regions placed at PIN diodes, thereby controlling the beam direction and the gain of the reflector antenna. The constant current regulator was necessarily designed to obtain expected carrier density and maintain the stable operation of the diodes. The measured reflection coefficient and peak gain of the antenna around the center frequency of 5.5 GHz were -13.5 dB and 5.4 dBi, respectively.
- KSP 제안 키워드
- 5 GHz, Carrier density, Center frequency, Constant current(CC), Current Regulator, Gain of the Antenna, PIN Diode, Reflection Coefficient, Semiconductor reflector antenna, Stable operation, high conductivity