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Conference Paper
Semiconductor-Based Reflector Antenna Using Integrated PIN Diodes
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- Issue Date
- 2016-10
- Citation
- International Symposium on Antennas and Propagation (ISAP) 2016, pp.748-749
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents a semiconductor reflector antenna for use in reconfigurable telecommunication systems. The quasi-metallic reflector characteristic was obtained by formation of high conductivity plasma regions placed at PIN diodes, thereby controlling the beam direction and the gain of the reflector antenna. The constant current regulator was necessarily designed to obtain expected carrier density and maintain the stable operation of the diodes. The measured reflection coefficient and peak gain of the antenna around the center frequency of 5.5 GHz were -13.5 dB and 5.4 dBi, respectively.
- KSP Keywords
- 5 GHz, Carrier density, Center frequency, Constant current(CC), Current Regulator, Gain of the Antenna, High Conductivity, PIN Diode, Semiconductor reflector antenna, Stable operation, metallic reflector