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A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
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- Authors
- Hyun-Wook Jung, Sung-Jin An, Min-Jeong Sin, Jae-Won Do, Byoung-Gue Min, Haecheon Kim, Hyung Sup Yoon, Ho-Kyun Ahn, Kyu-Jun Cho, Mun Seok Jeong, Jong-Won Lim, Yong Hwan Kwon, Eun Soo Nam
- Issue Date
- 2016-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- Abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) are one of the promising devices in high frequency operation due to its high 2DEG mobility and saturation velocity. During the heteroepitaxial growth of AlGaN/GaN on SiC substrate, the stressed layer with the high threading dislocation density is caused by the difference of lattice mismatch and thermal expansion coefficient between substrate and epitaxial layer. In addition, the passivation layer to mitigate the surface charge trapping also affects the residual stress on the device. Therfore, the systematic study of stress is an important issue because it can influence the performance and reliability of HEMTs. Recently, F. Jabli et al. revealed the effect of stress on the optical and 2DEG concentration on HEMTs using Raman and PL technique [1]. However, it is insufficient to study the effect of stress on the electrical properties. This paper investigates the impact of stress on electrical properties in AlGaN/GaN HEMTs as a function of the passivation layer thickness. The stress of AlGaN/GaN HEMTs was measured by Raman spectroscopy, and DC characteristic have been analyzed.
- KSP Keywords
- AlGaN/GaN HEMTs, Charge trapping, DC Characteristics, Electrical properties, Epitaxial layer, GaN on SiC, Heteroepitaxial Growth, High frequency(HF), High frequency operation, High-electron mobility transistor(HEMT), Layer thickness