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Conference Paper
Hydrazine (N2H4)-Based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with A High Quality Interface
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- Authors
- Hyun-Wook Jung, Min Jeong Shin, Ho-Kyun Ahn, Jae-Won Do, Sung-Jae Chang, Kyu Jun Cho, Byoung-Gue Min, Hae-cheon Kim, Hyung-Sup Yoon, Jong-Won Lim
- Issue Date
- 2016-09
- Citation
- International Conference on Solid State Devices and Materials (SSDM) 2016, pp.785-786
- Language
- English
- Type
- Conference Paper
- Abstract
- This letter reports a AlGaN/GaN high electron mobility transistors (HEMTs) with a high quality insulator/IIInitride interface using N2H4 treatment prior to Al2O3 deposition. A decomposition of native oxide is revealed by Xray photoelectron spectroscopy (XPS), and a good Al-GaN/GaN surface roughness is observed by atomic force microscopy (AFM). A gate stress dependent transfer curve sweep exhibits the improved Vth hysteresis, indicating that N2H4 treatment effectively improves the Al-GaN/GaN surface.
- KSP Keywords
- Atomic force microscope(AFM), Atomic force microscopy (afm), GaN surface, High-electron mobility transistor(HEMT), Stress dependent, Surface roughness, Surface treatment method, native oxide, photoelectron spectroscopy