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학술지 Fully-Integrated Two-Stage GaN MMIC Doherty Power Amplifier for LTE Small Cells
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저자
김철호, 박봉혁
발행일
201611
출처
IEEE Microwave and Wireless Components Letters, v.26 no.11, pp.918-920
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2016.2615018
협약과제
16HF1100, 28GHz 대역 5G 이동통신 휴대 단말용 RF 전치단 개발, 박봉혁
초록
A novel two-stage Doherty power amplifier (PA) was designed and fully integrated on a 0.25-μm GaN on SiC monolithic microwave integrated circuit die with a dimension of 3.3×2.6 mm2 to build small-cell base stations. An asymmetric Doherty configuration was adopted for the power stage with the reversed uneven input power splitting network for better performance. To improve linearity, the third-order intermodulation distortion (IMD3) was minimized by cancelling IMD3s between the carrier and peaking amplifiers. The two-section quarterwave transformer was used for more uniform in-band frequency responses. The fabricated PA showed a power-added efficiency of 46.8% and a power gain of 30.9 dB at an average power of 35.1 dBm for a 2.655-GHz long-term evolution signal with a 7.1-dB peak-to-average power ratio. The adjacent channel leakage ratio was -40.2 dBc without any linearization, and it was lowered to -49.3 dBc by a digital pre-distortion linearization.
KSP 제안 키워드
Adjacent channel leakage ratio(ACLR), Doherty power amplifier(DPA), Frequency response(FreRes), Fully integrated, GaN on SiC, Input power, LTE small cell, Long term Evolution(LTE), Microwave monolithic integrated circuits(MMIC), Peak-to-Average-Power-Ratio(PAPR), Power added efficiency(PAE)