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Fully-Integrated Two-Stage GaN MMIC Doherty Power Amplifier for LTE Small Cells
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- Authors
- Cheol Ho Kim, Bonghyuk Park
- Issue Date
- 2016-11
- Citation
- IEEE Microwave and Wireless Components Letters, v.26, no.11, pp.918-920
- ISSN
- 1531-1309
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A novel two-stage Doherty power amplifier (PA) was designed and fully integrated on a 0.25-μm GaN on SiC monolithic microwave integrated circuit die with a dimension of 3.3×2.6 mm2 to build small-cell base stations. An asymmetric Doherty configuration was adopted for the power stage with the reversed uneven input power splitting network for better performance. To improve linearity, the third-order intermodulation distortion (IMD3) was minimized by cancelling IMD3s between the carrier and peaking amplifiers. The two-section quarterwave transformer was used for more uniform in-band frequency responses. The fabricated PA showed a power-added efficiency of 46.8% and a power gain of 30.9 dB at an average power of 35.1 dBm for a 2.655-GHz long-term evolution signal with a 7.1-dB peak-to-average power ratio. The adjacent channel leakage ratio was -40.2 dBc without any linearization, and it was lowered to -49.3 dBc by a digital pre-distortion linearization.