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Fully-Integrated Two-Stage GaN MMIC Doherty Power Amplifier for LTE Small Cells
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- Authors
- Cheol Ho Kim, Bonghyuk Park
- Issue Date
- 2016-11
- Citation
- IEEE Microwave and Wireless Components Letters, v.26, no.11, pp.918-920
- ISSN
- 1531-1309
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A novel two-stage Doherty power amplifier (PA) was designed and fully integrated on a 0.25-μm GaN on SiC monolithic microwave integrated circuit die with a dimension of 3.3×2.6 mm2 to build small-cell base stations. An asymmetric Doherty configuration was adopted for the power stage with the reversed uneven input power splitting network for better performance. To improve linearity, the third-order intermodulation distortion (IMD3) was minimized by cancelling IMD3s between the carrier and peaking amplifiers. The two-section quarterwave transformer was used for more uniform in-band frequency responses. The fabricated PA showed a power-added efficiency of 46.8% and a power gain of 30.9 dB at an average power of 35.1 dBm for a 2.655-GHz long-term evolution signal with a 7.1-dB peak-to-average power ratio. The adjacent channel leakage ratio was -40.2 dBc without any linearization, and it was lowered to -49.3 dBc by a digital pre-distortion linearization.
- KSP Keywords
- Adjacent channel leakage ratio(ACLR), Doherty power amplifier(DPA), Frequency response, GaN on SiC, Input power, LTE small cell, Long Term Evolution(LTE), Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Peak to average Power ratio(PAPR), Power added efficiency(PAE)