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Journal Article A V-Band Current-Reused LNA With a Double-Transformer-Coupling Technique
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Authors
Sunwoo Kong, Hui Dong Lee, Moon-Sik Lee, Bonghyuk Park
Issue Date
2016-11
Citation
IEEE Microwave and Wireless Components Letters, v.26, no.11, pp.942-944
ISSN
1531-1309
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LMWC.2016.2615017
Abstract
This letter presents a current-reused V-band low-noise amplifier (LNA) with a double-transformer-coupling technique in 65nm CMOS technology. A couple of common-source (CS) stages are stacked to share current, and the double transformers are used as an RF signal path between the CS stages for both gain and stability considerations. The LNA has three CS-CS stages, and achieves a peak gain of 31.4 dB, a minimum noise figure (NF) of 4.7 dB, and a P1dB of -2 dBm over 62.9-67 GHz with a power consumption of 6 mW. The chip size is 0.66 × 0.90 mm2 including pads.
KSP Keywords
65nm CMOS technology, Coupling technique, Minimum noise figure, Noise Figure(NF), Power Consumption, RF signal, V-band, common-source, current-reused, low noise amplifier(LNA), peak gain