상세정보
학술지
A V-Band Current-Reused LNA With a Double-Transformer-Coupling Technique
- 발행일
- 201611
- 출처
- IEEE Microwave and Wireless Components Letters, v.26 no.11, pp.942-944
- ISSN
- 1531-1309
- 출판사
- IEEE
- 협약과제
- 16MF1200, (통합)초연결 스마트 서비스를 위한 5G 이동통신 핵심기술개발, 정현규
- 초록
- This letter presents a current-reused V-band low-noise amplifier (LNA) with a double-transformer-coupling technique in 65nm CMOS technology. A couple of common-source (CS) stages are stacked to share current, and the double transformers are used as an RF signal path between the CS stages for both gain and stability considerations. The LNA has three CS-CS stages, and achieves a peak gain of 31.4 dB, a minimum noise figure (NF) of 4.7 dB, and a P1dB of -2 dBm over 62.9-67 GHz with a power consumption of 6 mW. The chip size is 0.66 × 0.90 mm2 including pads.
- KSP 제안 키워드
- 65nm CMOS technology, Coupling technique, Minimum noise figure, Noise Figure(NF), Power Consumption, RF signal, V-band, common-source, current-reused, low noise amplifier(LNA), peak gain