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Journal Article Flexible Resistive Switching Memory Device Based on Graphene Oxide
Cited 167 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Seul Ki Hong, Ji Eun Kim, Sang Ouk Kim, Sung-Yool Choi, Byung Jin Cho
Issue Date
2010-09
Citation
IEEE Electron Device Letters, v.31, no.9, pp.1005-1007
ISSN
0741-3106
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LED.2010.2053695
Abstract
A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 103, low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics. © 2010 IEEE.
KSP Keywords
Flexible electronics, Flexible substrate, Graphene oxide(GOS), Resistive Random Access Memory(RRAM), Resistive switching characteristic, Switching performance, data retention, electrode materials, memory device, resistance ratio