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Flexible Resistive Switching Memory Device Based on Graphene Oxide
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- Authors
- Seul Ki Hong, Ji Eun Kim, Sang Ouk Kim, Sung-Yool Choi, Byung Jin Cho
- Issue Date
- 2010-09
- Citation
- IEEE Electron Device Letters, v.31, no.9, pp.1005-1007
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 103, low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics. © 2010 IEEE.
- KSP Keywords
- Graphene oxide, Resistive switching characteristic, Switching performance, data retention, electrode materials, flexible electronics, flexible substrate, memory device, resistance ratio, resistive switching memory(RRAM)