상세정보
학술지
Flexible Resistive Switching Memory Device Based on Graphene Oxide
- 저자
- 홍설기, 김지은, 김상욱, 최성율, 조병진
- 발행일
- 201009
- 출처
- IEEE Electron Device Letters, v.31 no.9, pp.1005-1007
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 10ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
- 초록
- A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 103, low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics. © 2010 IEEE.
- KSP 제안 키워드
- Flexible electronics, Flexible substrate, Graphene oxide(GOS), Resistive Random Access Memory(RRAM), Resistive switching characteristic, Switching performance, data retention, electrode materials, memory device, resistance ratio