상세정보
학술지
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
- 발행일
- 201002
- 출처
- IEEE Electron Device Letters, v.31 no.2, pp.138-140
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200 °C. The fabricated memory cell successfully showed the write and nondestructive readout operations. © 2006 IEEE.
- KSP 제안 키워드
- Cell structure, Gate insulator, Glass substrate, Non-Volatile Memory(NVM), Nondestructive readout operation, T-Type, Thin-Film Transistor(TFT), Transistor-type, memory cell, thin film(TF), vinylidene fluoride-co-hexafluoropropylene(Poly)