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Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
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- Authors
- Sung-Min Yoon, Chun-Won Byun, Shinhyuk Yang, Sang-Hee Ko Park, Doo-Hee Cho, Soon-Won Jung, Seung-Youl Kang, Chi-Sun Hwang
- Issue Date
- 2010-02
- Citation
- IEEE Electron Device Letters, v.31, no.2, pp.138-140
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Project Code
- 09MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200 °C. The fabricated memory cell successfully showed the write and nondestructive readout operations. © 2006 IEEE.
- KSP Keywords
- Cell structure, Gate insulator, Glass substrate, Non-Volatile Memory(NVM), Nondestructive readout operation, T-Type, Thin-Film Transistor(TFT), Transistor-type, memory cell, thin film(TF), vinylidene fluoride-co-hexafluoropropylene(Poly)