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학술지 High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
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저자
김상기, 원종일, 구진근, 양일석, 박종문, 박훈수, 채상훈
발행일
201610
출처
Transactions on Electrical and Electronic Materials, v.17 no.5, pp.301-304
ISSN
1229-7607
출판사
한국전기전자재료학회
DOI
https://dx.doi.org/10.4313/TEEM.2016.17.5.302
협약과제
16ZB1600, SiC 기반 트렌치형 차세대 전력소자 핵심기술 개발, 김상기
초록
In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 m廓 and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.
KSP 제안 키워드
Breakdown voltage(BDV), Cell density, Double layer, Effective production, Field-effect transistors(FETs), Gate oxide, High current, Hydrogen annealing, Low on-resistance, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET)