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High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
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- Authors
- Sang-Gi Kim, Jong-Il Won, Jin-Gun Koo, Yil-Suk Yang, Jong-Moon Park, Hoon-Soo Park, Sang-Hoon Chai
- Issue Date
- 2016-10
- Citation
- Transactions on Electrical and Electronic Materials, v.17, no.5, pp.301-304
- ISSN
- 1229-7607
- Publisher
- 한국전기전자재료학회
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 m廓 and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.
- KSP Keywords
- Breakdown voltage(BDV), Cell density, Double layer, Effective production, Field-effect transistors(FETs), Gate oxide, High current, Hydrogen annealing, Low on-resistance, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET)