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Journal Article Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Cited 78 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Inyeal Lee, Servin Rathi, Dongsuk Lim, Lijun Li, Jinwoo Park, Yoontae Lee, Kyung Soo Yi, Krishna P. Dhakal, Jeongyong Kim, Changgu Lee, Gwan-Hyoung Lee, Young Duck Kim, James Hone, Sun Jin Yun, Doo-Hyeb Youn, Gil-Ho Kim
Issue Date
2016-11
Citation
Advanced Materials, v.28, no.43, pp.9519-9525
ISSN
0935-9648
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1002/adma.201601949
KSP Keywords
Electron carrier, Field Effect Transistor(FET), ambipolar field-effect transistors, atomically thin, carrier transport, dual-channel, gate-tunable
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