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Journal Article
Effects of Ga concentration in Cu(In,Ga)Se 2 thin film solar cells with a sputtered-Zn(O,S) buffer layer
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- Authors
- Jae-Hyung Wi, Dae-Hyung Cho, Woo-Jung Lee, Won Seok Han, Yong-Duck Chung
- Issue Date
- 2017-03
- Citation
- Solar Energy, v.145, pp.59-65
- ISSN
- 0038-092X
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Cu(In,Ga)Se2 absorbers with several different ratios of Ga/(Ga혻+혻In) were deposited by varying the Ga content using co-evaporation. The effects of Ga concentration at the surface of the CIGS on the Zn(O,S)/CIGS photovoltaic performance were investigated. Considering application as the bottom cell in a monolithic tandem structure, the optimum Ga/(Ga혻+혻In) ratio of approximately 0.26 led to the best efficiency of 14.56%, and to complete carrier collection at long wavelengths. In addition, the degradation rate in efficiency was lowest at an annealing temperature of 400혻°C. The reason for losses of other Ga/(Ga혻+혻In) ratios (0.33 and 0.36) at longer wavelengths might be due to interface recombination, possibly aided by conduction band offset with the Ga grading shape by varying the Ga concentration. The results suggested that the decrease in efficiency might be due to recombination at the interface between the Zn(O,S) and CIGS layers before/after annealing. The reverse bias effect during quantum efficiency measurements at long wavelengths was used to determine separate optical and electrical losses.
- KSP Keywords
- Annealing temperature, Conduction band offset, Electrical Losses, Ga concentration, Ga content, Ga grading, Interface recombination, Reverse bias, Tandem structure, Thin film solar cells, bottom cell