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Journal Article Ultralow‐Temperature Sol–Gel Route to Metal Oxide Semiconductors for Soft Platforms
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Authors
Himchan Oh, Jong-Heon Yang, Chi-Sun Hwang
Issue Date
2016-10
Citation
Advanced Materials Interfaces, v.3, no.20, pp.1-5
ISSN
2196-7350
Publisher
Wiley-Blackwell
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1002/admi.201600664
Abstract
Metal oxide semiconductors (MOSs) have attracted great attention as promising active material for thin film electronics because they provide high field effect mobility (μFE) and excellent stability in thin film transistors (TFTs), compared with amorphous Si and organic semiconductors.[ 1–3 ] Vacuum deposition methods like sputtering or pulsed laser deposition have been primarily used to form such oxide film since the early stage of MOS development because it is quite easy to deposit fine quality films even at room temperature.[ 3–7 ] Despite this advantage, vacuum process suffers from high fabrication cost and difficulty in scaling up.[ 8,9 ] Thus, there have been continual efforts to develop the more scalable low-cost methods based on solution process.[ 10 ]
KSP Keywords
Active materials, Deposition method, Low-cost, Metal-oxide(MOX), Organic semiconductors, Oxide film, Pulsed-laser deposition(PLD), Room-temperature, Scaling up, Thin-Film Transistor(TFT), amorphous Si