BROWSE
Detail
Conference Paper
Investgation of GaN Channel Quality on the Device Properties in AIGaN/GaN HEMTs
Cited - time in 
Share 
Share
- Authors
- Sung-Jae Chang, Maruf Amin Bhuiyan, Hee-Sung Kang, Hyoung-Sup Yoon, Eun-Soo Nam, Jung-Hee Lee, Tso-Ping Ma, Jong-Won Lim
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Channel quality, Device properties, GaN HEMT