상세정보
학술지
An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors
- 발행일
- 201209
- 출처
- Japanese Journal of Applied Physics, v.51 no.9 PART3, pp.1-4
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP),
- 초록
- The effects of the source/drain (S/D) to gate overlap on the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are reported. The S/D to gate overlap dimension was varied by adjusting the gate width, while the channel length and width were fixed. The threshold voltage was found to decrease on increasing the overlap dimension; in contrast, the field-effect mobility increased. These characteristic variations are explained on aspects of charge injection and transport properties in pentacene OTFTs, due to the presence of S/D to gate overlaps. The results demonstrate the significant effect of the overlap on the OTFT performance. © 2012 The Japan Society of Applied Physics.
- KSP 제안 키워드
- An experimental study, Applied physics, Channel Length, Gate Width, Gate overlap, I-V characteristic(Transport property), Organic thin-film transistors (otfts), Pentacene thin-film transistors, Thin-Film Transistor(TFT), charge injection and transport, electrical characteristics