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Conference Paper
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
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- Authors
- Jong-Min Lee, Cheol-Won Ju, Byoung-Gue Min, Hyung Sup Yoon, Ho-Kyun Ahn, Seong Il Kim, Dong Min Kang, Hae Cheon Kim, Sang-Heung Lee, Dong-Young Kim, Kyu-Jun Jo, Jae-Won Do, Hyun- Uk Jung, Min-Jung Shin, Jong-Won Lim
- Issue Date
- 2016-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2016, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, we study the current-voltage characteristics of packaged AlGaN/GaN HEMT over wide temperature range. The device used in this work were grown on SiC substrate and was fabricated by using 4-inch GaN process and E-beam lithography technology. Tested device had a total gate width of 10×100 um and a gate length of 0.25 um. To measure the device characteristics at high temperatures, GaN HEMT device was packaged using the copper-molybdenum-copper packaging technology. Packaged devices demonstrated high power gain of 14.8 dB at 9.3 GHz and generated 5.0 W/mm output power with 3 dB gain compression at Vds = 30 V. To characterize the temperature effect, the package was implemented on the temperature-controlled test plate. The plate temperature was varied from 300 K to 420 K and DC measurement was performed at each temperature. It is observed that the Schottky barrier height and the ideality factor of devices were strongly temperature dependent. The relationship of gate diode parameters on the temperature was shown and analyzed.
- KSP Keywords
- AlGaN/GaN HEMTs, Barrier height(BH), DC measurements, Device characteristics, Diode parameters, E-beam lithography, Gate Width, High Temperature, High power, Lithography technology, Molybdenum-copper