상세정보
학술지
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
- 발행일
- 201008
- 출처
- Journal of Alloys and Compounds, v.504 no.1, pp.146-150
- ISSN
- 0925-8388
- 출판사
- Elsevier
- 초록
- We have investigated the temperature dependent current-voltage (I-V) characteristics of Ti Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 K. The capacitance-voltage (C-V) characteristics of the Ti Schottky contact to p-type InP have been measured at room temperature and at different frequencies. The barrier heights from C-V measurements are calculated to be 0.71, 0.72 and 0.77 eV at 10 kHz, 100 kHz and 1 MHz, respectively. The discrepancy of barrier heights obtained from I-V at 300 K and C-V characteristics measured at f = 1 MHz at 300 K is negligible due to homogenous nature of Schottky diode structures. The characteristic energy of the diode at 300 K showed thermionic emission to be the dominating current mechanism. The analysis of the reverse current-voltage characteristics of the Ti Schottky contact to p-type InP reveals that the main process involved in leakage current could be associated with the Frenkel-Poole emission at 300 K, while at 350 K and 400 K, the Schottky emission. © 2010 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- At f, C-V measurements, Capacitance-voltage (C-V) characteristics, Carrier transport mechanisms, Computer Vision(CV), Current mechanism, Current-voltage (I-V) characteristics, Different frequency, Frenkel-Poole emission, Initialization Vector(IV), Leakage current