상세정보
학술지
Moisture-Induced Hysteresis of Pentacene Thin Film Transistors with Cross-Linked Poly(4-vinylphenol) Gate Dielectrics
- 발행일
- 201105
- 출처
- Journal of Nanoscience and Nanotechnology, v.11 no.5, pp.4577-4580
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 초록
- The time variable electrical characteristics of pentacene thin-film transistors (TFTs) with poly(4-vinylphenol) gate dielectrics were investigated under various relative humidity conditions and the effect of moisture on the hysteresis behavior of the pentacene TFTs was studied. One possible cause of the hysteresis behavior is the presence of inherent hydroxyl groups in bulk or surface of the polymeric dielectric, which make the gate dielectric polar, but the hysteresis behavior of the pentacene TFTs was found to depend strongly on the relative humidity and to increase with an increase of the moisture in the surrounding atmosphere. With a time-scalable investigation, it was also found that the adsorption of moisture onto the pentacene layer is the main reason for the hysteresis even with the-OH rich polymeric dielectric. The hysteresis behavior was found to be significantly reduced by suppression of moisture or other moisture-induced impurities, such as the encapsulation of the devices with glass. Copyright © 2011 American Scientific Publishers All rights reserved.
- KSP 제안 키워드
- 4-vinyl phenol(Poly), Cross-linked, Effect of moisture, Pentacene layer, Pentacene thin-film transistors, Relative Humidity, Thin-Film Transistor(TFT), electrical characteristics, gate dielectric, hydroxyl group, hysteresis behavior