BROWSE
Detail
Journal Article
Moisture-Induced Hysteresis of Pentacene Thin Film Transistors with Cross-Linked Poly(4-vinylphenol) Gate Dielectrics
Cited 0 time in 
Share 
Share
- Authors
- Jun Ho Kim, Kyu-Ha Beak, Ki Chul Song, Do Jin Kim, Kijun Lee, Lee-Mi Do
- Issue Date
- 2011-05
- Citation
- Journal of Nanoscience and Nanotechnology, v.11, no.5, pp.4577-4580
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- The time variable electrical characteristics of pentacene thin-film transistors (TFTs) with poly(4-vinylphenol) gate dielectrics were investigated under various relative humidity conditions and the effect of moisture on the hysteresis behavior of the pentacene TFTs was studied. One possible cause of the hysteresis behavior is the presence of inherent hydroxyl groups in bulk or surface of the polymeric dielectric, which make the gate dielectric polar, but the hysteresis behavior of the pentacene TFTs was found to depend strongly on the relative humidity and to increase with an increase of the moisture in the surrounding atmosphere. With a time-scalable investigation, it was also found that the adsorption of moisture onto the pentacene layer is the main reason for the hysteresis even with the-OH rich polymeric dielectric. The hysteresis behavior was found to be significantly reduced by suppression of moisture or other moisture-induced impurities, such as the encapsulation of the devices with glass. Copyright © 2011 American Scientific Publishers All rights reserved.
- KSP Keywords
- 4-vinylphenol(Poly), Cross-linked, Effect of moisture, Electrical characteristics, Hysteresis behavior, Pentacene layer, Pentacene thin-film transistors, Relative Humidity(RH), Thin-Film Transistor(TFT), gate dielectric, hydroxyl group