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Journal Article
A 41dB Gain Control Range 6th-Order Band-Pass Receiver Front-End Using CMOS Switched FTI
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- Authors
- Seon-Ho Han, Hoai-Nam Nguyen, Ki-Su Kim, Mi-Jeong Park, Ik-Soo Yeo, Cheon-Soo Kim
- Issue Date
- 2016-10
- Citation
- Journal of Semiconductor Technology and Science, v.16, no.5, pp.675-681
- ISSN
- 1598-1657
- Publisher
- 대한전자공학회 (IEIE)
- Language
- English
- Type
- Journal Article
- Abstract
- A 41dB gain control range 6th-order bandpass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.
- KSP Keywords
- 40 nm, Band-Pass Filter(BPF), CMOS Technology, CMOS switches, Carrier frequency, Common-mode noise, Control range, Current consumption, Gain Control, Last stage, Pass-band