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Journal Article
Voltage-Pulse-Induced Switching Dynamics in VO2 Thin-Film Devices on Silicon
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- Authors
- Giwan Seo, Bong-Jun Kim, Changhyun Ko, Yanjie Cui, Yong Wook Lee, Jun-Hwan Shin, Shriram Ramanathan, Hyun-Tak Kim
- Issue Date
- 2011-11
- Citation
- IEEE Electron Device Letters, v.32, no.11, pp.1582-1584
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers. © 2006 IEEE.
- KSP Keywords
- Delay Time, Endurance test, External resistance, Metallic state, Phase transition, Rising time, Transition layers, Voltage pulse, insulating state, metal-insulator transition, out-of-plane