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Raman Spectroscopy Studies of Spin-wave in V2O3 Thin Films
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- Authors
- Xiang-Bai Chen, Meng-Hong Kong, Jeong-Yong Choi, Hyun-Tak Kim
- Issue Date
- 2016-11
- Citation
- Journal of Physics D : Applied Physics, v.49, no.46, pp.1-5
- ISSN
- 0022-3727
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We present studies of the enhancement of spin-wave intensity and thickness dependence of spin-wave frequency in V2O3 thin films using Raman spectroscopy. Our results show that the intensity of spin-wave at ~450 cm-1 can be enhanced with a 633 nm laser rather than a 514 nm laser. The enhancement of spin-wave intensity is due to a resonance effect correlated with the on-site V 3d-3d Coulomb energy. A thickness dependence study shows that as the film thickness increases, the frequency of spin-wave at ~450 cm-1 has a redshift, while the frequency of the A g phonon at ~525 cm-1 has negligible shift. In comparison to the thickness dependence of the XRD results, we conclude that the spin-wave at ~450 cm-1 in V2O3 exists in the basal a-b plane, and the Raman study of the spin-wave provides a sensitive method for investigating the lattice and/or structure properties of crystals.
- KSP Keywords
- Coulomb energy, Film thickness, On-site, Raman Spectroscopy, Raman study, Sensitive Method, Structure properties, V 3D, Wave frequency, Wave intensity, resonance effect