상세정보
학술지
Raman Spectroscopy Studies of Spin-wave in V2O3 Thin Films
- 발행일
- 201611
- 출처
- Journal of Physics D : Applied Physics, v.49 no.46, pp.1-5
- ISSN
- 0022-3727
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 16ZB1700, 금속-절연체 전이(MIT) 기술 개발, 김현탁
- 초록
- We present studies of the enhancement of spin-wave intensity and thickness dependence of spin-wave frequency in V2O3 thin films using Raman spectroscopy. Our results show that the intensity of spin-wave at ~450 cm-1 can be enhanced with a 633 nm laser rather than a 514 nm laser. The enhancement of spin-wave intensity is due to a resonance effect correlated with the on-site V 3d-3d Coulomb energy. A thickness dependence study shows that as the film thickness increases, the frequency of spin-wave at ~450 cm-1 has a redshift, while the frequency of the A g phonon at ~525 cm-1 has negligible shift. In comparison to the thickness dependence of the XRD results, we conclude that the spin-wave at ~450 cm-1 in V2O3 exists in the basal a-b plane, and the Raman study of the spin-wave provides a sensitive method for investigating the lattice and/or structure properties of crystals.
- KSP 제안 키워드
- Coulomb energy, On-Site, Raman spectroscopy, Raman study, Sensitive Method, Structure properties, V 3D, Wave frequency, Wave intensity, film thickness, resonance effect