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Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4 Gas
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- Authors
- Jaehoon Park, Kun-Sik Park, Ye-Sul Jeong, Kyu-Ha Baek, Bong Kuk Lee, Dong-Pyo Kim, Jin-Hwa Ryu, Lee-Mi Do, Hiroshi Imamura, Kiyoshi Yase, Jong Sun Choi
- Issue Date
- 2012-07
- Citation
- Japanese Journal of Applied Physics, v.51, no.8, pp.1-4
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP),
- Language
- English
- Type
- Journal Article
- Abstract
- The influence of tetrafluoromethane (CF4) gas on the electrical characteristics of monolithic graphene field-effect transistors (FETs) is reported. Compared with the results in nitrogen ambient, FETs in CF4 ambient exhibit a positive shift in the Dirac point voltage and an increase in drain current. These changes are ascribed to the electronegative nature of the fluorine atoms in CF4 gas, which is found to induce p-type doping and excess charge carriers in graphene. The electrical response to CF4 gas exposure demonstrates the feasibility of using monolithic graphene FETs as chemical sensors. © 2012 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Charge carriers, Chemical sensors, Dirac point voltage, Drain current, Electrical response, Field-effect transistors(FETs), Graphene FETs, electrical characteristics, excess charge, gas exposure