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학술지 Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides
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저자
임영안, 김기수, 송정호, 권오균, 김경옥
발행일
201004
출처
ETRI Journal, v.32 no.2, pp.339-341
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.10.0209.0172
협약과제
08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of 3.7μm. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 μm), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices. Copyright © 2010 ETRI.
키워드
Fundamental transverse mode, Hybrid laser diode
KSP 제안 키워드
20 nm, Deep ridge waveguide, Efficient coupling, Higher Modes, Hybrid laser, Laser diode(LD), Mode profile, Ridge waveguides(RWs), Silicon layer, Silicon waveguide, Single mode