상세정보
학술지
Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides
- 발행일
- 201004
- 출처
- ETRI Journal, v.32 no.2, pp.339-341
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of 3.7μm. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 μm), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices. Copyright © 2010 ETRI.
- KSP 제안 키워드
- 20 nm, Efficient coupling, Higher mode, Hybrid laser, Laser diode(LD), Mode profile, Ridge waveguides(RWs), Silicon layer, Silicon waveguide, Single mode, Threshold current