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Journal Article
Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides
- Authors
- Young Ahn Leem, Kisoo Kim, Jung-Ho Song, O-Kyun Kwon, Gyungock Kim
- Issue Date
- 2010-04
- Citation
- ETRI Journal, v.32, no.2, pp.339-341
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of 3.7μm. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 μm), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices. Copyright © 2010 ETRI.
- KSP Keywords
- 20 nm, Efficient coupling, Higher mode, Hybrid laser, Laser diode, Mode profile, Silicon layer, Silicon waveguide, Single mode, Threshold current, Transverse mode