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Journal Article High-Responsivity and High-Speed Waveguide Photodiode With a Thin Absorption Region
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Authors
Jeong-Woo Park
Issue Date
2010-07
Citation
IEEE Photonics Technology Letters, v.22, no.13, pp.975-977
ISSN
1041-1135
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LPT.2010.2048561
Project Code
10MB1300, Silicon-based high-speed optical interconnection IC, Kim Gyungock
Abstract
The characteristics of a waveguide photodiode with a thin absorption layer are reported. A responsivity of 1.08 A/W at 1.55μm was measured using a 0.1-μm-thick absorption region with a polarization dependence of less than 0.25 dB. A thin absorption layer enables us to use a thicker intrinsic layer. Using a thicker intrinsic region of 0.9 μm and an adiabatically reduced waveguide width, a bandwidth of 42 GHz was achieved. Adopting a tapering waveguide width did not give rise to a degradation of responsivity or alignment tolerance. © 2006 IEEE.
KSP Keywords
Absorption layer, High Speed, Polarization dependence, Waveguide photodiodes(WGPD), alignment tolerance, high responsivity, intrinsic layer