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Conference Paper
몰리브데넘 기반의 오믹 저항을 이용한 AlGaN/GaN 쇼키 다이오드 특성
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- Issue Date
- 2016-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- Schottky barrier diodes (SBDs) on AlGaN/GaN heterostructure are one of promising alternatives for high power switching device, because of their high switching speed, low on-resistance and large breakdown voltage. Lots of investigations are performed for the application of AlGaN/GaN SBD for rectifiers or devices in DC-DC converters and inverters. In this work, we investigated the optimal conditions of Mo-based ohmic contact for fabrication of AlGaN/GaN SBD devices, and characterized the fabricated AlGaN/GaN SBD devices using optimized ohmic condition with Mo-based ohmic metal..
- KSP Keywords
- AlGaN/GaN heterostructure, Breakdown Voltage, DC-DC Converters, High power, High switching speed, Low on-resistance, Ohmic metal, Optimal condition, ohmic contact, power switching device, schottky barrier diode(SBD)