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Conference Paper
Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure
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- Authors
- Zin-Sig Kim, Hyung-Seok Lee, Jeho Na, Sang-Choon Ko, Eunsoo Nam, Jong-Won Lim
- Issue Date
- 2016-07
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- AlGaN/GaN heterostructure, Etching conditions, Field Effect Transistor(FET), Low-rate, Normally-Off, dry etching