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Journal Article Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
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Authors
Kyeong-Ah Kim, Chun-Won Byun, Jong-Heon Yang, Kyoung-Ik Cho, Chi-Sun Hwang, Sung-Min Yoon
Issue Date
2016-01
Citation
IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401
ISSN
0018-9383
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/TED.2015.2501018
Abstract
New circuit architecture composed of nonvolatile memory thin-film transistors (M-TFTs) and oxide-semiconductor TFTs (Ox-TFTs) has been proposed to realize low-power consumption and compact size for dynamic driving circuit applications. In order to compensate the slow operation speed of the nonvolatile M-TFTs in the dynamic driving circuits, we proposed the read-out modulation (ROM) scheme. The device operation characteristics of the M-TFTs were confirmed under various specified conditions to effectively apply the ROM, in which a top-gate structure was fabricated to be ferroelectric poly(vinylidene fluoride-trifluoroethylene) gate insulator/Al2O3/In-Ga-ZnO active layers. Full fabrication processes for the M-TFTs were optimized, so that they can be integrated with Ox-TFTs on the same glass substrate. The memory device characteristics, including the current ratios between ON- and OFF-programmed drain current (ID) values (Ip-ON/Ip-OFF) before and after the ROM, drain-bias dependence of the Ip-ON/Ip-OFF, and the program ID scalability, were confirmed for the fabricated M-TFT. These results suggest the feasibility of a low-power display driver circuit embedded with the nonvolatile M-TFTs.
KSP Keywords
Active Layer, Bias dependence, Compact size, Device characteristics, Display driver, Drain current, Driver circuit, Driving circuit, Ga-ZnO, Gate insulator, Glass substrate