상세정보
학술지
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
- 발행일
- 201601
- 출처
- IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 16MB1100, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
- 초록
- New circuit architecture composed of nonvolatile memory thin-film transistors (M-TFTs) and oxide-semiconductor TFTs (Ox-TFTs) has been proposed to realize low-power consumption and compact size for dynamic driving circuit applications. In order to compensate the slow operation speed of the nonvolatile M-TFTs in the dynamic driving circuits, we proposed the read-out modulation (ROM) scheme. The device operation characteristics of the M-TFTs were confirmed under various specified conditions to effectively apply the ROM, in which a top-gate structure was fabricated to be ferroelectric poly(vinylidene fluoride-trifluoroethylene) gate insulator/Al2O3/In-Ga-ZnO active layers. Full fabrication processes for the M-TFTs were optimized, so that they can be integrated with Ox-TFTs on the same glass substrate. The memory device characteristics, including the current ratios between ON- and OFF-programmed drain current (ID) values (Ip-ON/Ip-OFF) before and after the ROM, drain-bias dependence of the Ip-ON/Ip-OFF, and the program ID scalability, were confirmed for the fabricated M-TFT. These results suggest the feasibility of a low-power display driver circuit embedded with the nonvolatile M-TFTs.
- KSP 제안 키워드
- Active Layer, Bias dependence, Compact size, Device characteristics, Display driver, Drain current, Driver circuit, Driving circuit, Ga-ZnO, Gate insulator, Glass substrate