Journal Article
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
New circuit architecture composed of nonvolatile memory thin-film transistors (M-TFTs) and oxide-semiconductor TFTs (Ox-TFTs) has been proposed to realize low-power consumption and compact size for dynamic driving circuit applications. In order to compensate the slow operation speed of the nonvolatile M-TFTs in the dynamic driving circuits, we proposed the read-out modulation (ROM) scheme. The device operation characteristics of the M-TFTs were confirmed under various specified conditions to effectively apply the ROM, in which a top-gate structure was fabricated to be ferroelectric poly(vinylidene fluoride-trifluoroethylene) gate insulator/Al2O3/In-Ga-ZnO active layers. Full fabrication processes for the M-TFTs were optimized, so that they can be integrated with Ox-TFTs on the same glass substrate. The memory device characteristics, including the current ratios between ON- and OFF-programmed drain current (ID) values (Ip-ON/Ip-OFF) before and after the ROM, drain-bias dependence of the Ip-ON/Ip-OFF, and the program ID scalability, were confirmed for the fabricated M-TFT. These results suggest the feasibility of a low-power display driver circuit embedded with the nonvolatile M-TFTs.
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.