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학술지 A Compact Ku-band SiGe Power Amplifier MMIC with On-chip Active Biasing
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저자
노윤섭, 엄만석, 염인복
발행일
201006
출처
IEEE Microwave and Wireless Components Letters, v.20 no.6, pp.349-351
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2010.2047530
초록
A Ku-band power amplifier monolithic microwave integrated circuit (MMIC) with an output power density of 726 mW/mm2 is demonstrated using 0.25 μm SiGe BiCMOS technology. No inductor matching scheme is applied to minimize the MMIC size, but an active biasing topology is used to enhance the power-added efficiency (PAE) and linearity of the MMIC. The fabricated one-stage cascode power amplifier MMIC, including input/output matching and biasing circuits, has a compact size of 0.384 mm2 (0.6 mm × 0.64 mm), and exhibits a saturated output power (Psat) of 24.45 dBm and a PAE of 29.1 % at 14 GHz. © 2010 IEEE.
키워드
Cascode, Heterojunction bipolar transistor (HBT), Ku-band, Power amplifier (PA), Silicon germanium (SiGe)
KSP 제안 키워드
Band Power, Compact size, Heterojunction Bipolar Transistors(HBTs), Input/Output Matching, Ku-Band, Microwave monolithic integrated circuits(MMIC), On-chip, One-stage, Output power density, Power added efficiency(PAE), Power amplifier MMIC