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Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
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- Authors
- Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Hiroshi Ishiwara
- Issue Date
- 2010-02
- Citation
- Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- A solution-process-based nonvolatile memory thin-film transistor (MTFT) was demonstrated to realize simple and low cost memory devices for future large-area electronics. The semiconducting active channel of zinc indium oxide (ZIO) and a gate insulator of poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] were prepared by a spin-coating method using corresponding precursor solutions. The obtained ZIO film was amorphous and showed an excellent transmittance (~90%) in the visible range. The MTFT showed a turn-on voltage shift originating from the ferroelectric nature of P(VDF-TrFE), a field-effect mobility of 3.3 cm2 V-1 s-1, and a subthreshold swing of 0.86 V/dec with an on/off current ratio of 8.4× 106. © 2010 The Electrochemical Society.
- KSP Keywords
- Active channel, Ferroelectric gate, First Stokes(S1), Large-area electronics, Low-cost, Nonvolatile memory(NVM), Process-based, Solution-processed, Thin-Film Transistor(TFT), Turn-on voltage, VDF-TrFE(PZT/P)