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학술대회 0.84-THz Imaging Pixel with a Lock-in Amplifier in CMOS
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저자
Rui Xu, 이자열, 김대연, 박신웅, Zeshan Ahmad, Kenneth K. O.
발행일
201605
출처
Radio Frequency Integrated Circuits (RFIC) Symposium 2016, pp.166-169
DOI
https://dx.doi.org/10.1109/RFIC.2016.7508277
협약과제
16PB1600, Web 기반 어플리케이션 최적화 가상머신 가속엔진 개발, 구본태
초록
An 840-GHz Schottky diode detector is integrated with an analog lock-in amplifier in 130-nm bulk CMOS. The integrated lock-in amplifier can support a modulation frequency of up to 10MHz with a gain of 54dB, a dynamic range of 42dB, and an input referred noise of less than 10 nV/?닖Hz at modulation frequencies higher than 100kHz. The integrated lock-in amplifier occupies an area of 0.17 mm2 and consumes 4.9mA from a 1.2-V supply. The detector and on-chip lock-in amplifier combination was used to form terahertz images.
KSP 제안 키워드
7 mm, Analog lock-in amplifier, Bulk CMOS, Modulation frequency, On-chip, THz imaging, diode detector, dynamic range, input referred noise, integrated lock-in, schottky diode