BROWSE
Detail
Conference Paper
0.84-THz Imaging Pixel with a Lock-in Amplifier in CMOS
Cited 7 time in 
Share 
Share
- Authors
- Rui Xu, Ja-Yol Lee, Dae Yeon Kim, Shinwoong Park, Zeshan Ahmad, Kenneth K. O.
- Issue Date
- 2016-05
- Citation
- Radio Frequency Integrated Circuits (RFIC) Symposium 2016, pp.166-169
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- An 840-GHz Schottky diode detector is integrated with an analog lock-in amplifier in 130-nm bulk CMOS. The integrated lock-in amplifier can support a modulation frequency of up to 10MHz with a gain of 54dB, a dynamic range of 42dB, and an input referred noise of less than 10 nV/?닖Hz at modulation frequencies higher than 100kHz. The integrated lock-in amplifier occupies an area of 0.17 mm2 and consumes 4.9mA from a 1.2-V supply. The detector and on-chip lock-in amplifier combination was used to form terahertz images.
- KSP Keywords
- 7 mm, Analog lock-in amplifier, Bulk CMOS, Modulation frequency, On-chip, THz imaging, diode detector, dynamic range, input referred noise, integrated lock-in, schottky diode