상세정보
학술지
Direct Observation of Microscopic Change Induced by Oxygen Vacancy Drift in Amorphous TiO2 Thin Films
- 발행일
- 201007
- 출처
- Applied Physics Letters, v.97 no.4, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 09MB7200, 플렉서블 PoRAM 소재 원천기술 개발, 최성율
- 초록
- To clarify the resistive switching and failure mechanisms in Al/amorphous TiO2 /Al devices we investigate the microscopic change in amorphous titanium oxide films and interface layers after the set process according to film deposition temperatures. For low temperature (<150 °C) samples, the thickness of top interface layer decreased after the set process due to the dissociation of a top interface layer by uniform migration of oxygen vacancies. Meanwhile, for high temperature samples, crystalline TiO phases emerged in the failed state, meaning the formation of conducting paths from the local clustering of oxygen vacancies in nonhomogeneous titanium oxide film. © 2010 American Institute of Physics.
- KSP 제안 키워드
- Amorphous titanium oxide, Direct observation, Failure mechanism, High Temperature, Local clustering, Low temperature(LT), TiO2 thin films, Titanium oxide film, film deposition, interface layer, oxygen vacancy drift