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Direct Observation of Microscopic Change Induced by Oxygen Vacancy Drift in Amorphous TiO2 Thin Films
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- Authors
- Hu Young Jeong, Jeong Yong Lee, Sung-Yool Choi
- Issue Date
- 2010-07
- Citation
- Applied Physics Letters, v.97, no.4, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- To clarify the resistive switching and failure mechanisms in Al/amorphous TiO2 /Al devices we investigate the microscopic change in amorphous titanium oxide films and interface layers after the set process according to film deposition temperatures. For low temperature (<150 °C) samples, the thickness of top interface layer decreased after the set process due to the dissociation of a top interface layer by uniform migration of oxygen vacancies. Meanwhile, for high temperature samples, crystalline TiO phases emerged in the failed state, meaning the formation of conducting paths from the local clustering of oxygen vacancies in nonhomogeneous titanium oxide film. © 2010 American Institute of Physics.
- KSP Keywords
- Amorphous titanium oxide, Direct observation, Failure mechanisms, Film deposition, High Temperature, TiO2 thin films, Titanium oxide film, interface layer, local clustering, low temperature, oxygen vacancy drift