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Conference Paper
고효율·저손실 GaN 전력반도체 연구개발 동향
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- Issue Date
- 2016-11
- Citation
- 대한전자공학회 학술 대회 (추계) 2016, pp.939-942
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- Global R&D trend of high efficiency and low loss GaN power semiconductor technologies will be presented in the conference. This is why to mention the importance of R&D in our country and hope to be next generation big player in the IT-consumer, EV/HEV, PV, ESS, FC, renewable energy markets. Finally, we will talk about several R&D results of GaN power devices and power conversion modules developed in ETRI for last several years.