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Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl 2/Ar Inductively Coupled Plasma
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- Authors
- Daehee Kim, Alexander Efremov, Hanbyeol Jang, Sungchil Kang, Sun Jin Yun, Kwang-Ho Kwon
- Issue Date
- 2012-12
- Citation
- Japanese Journal of Applied Physics, v.51, no.10, pp.1-5
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP),
- Language
- English
- Type
- Journal Article
- Abstract
- The TiO 2 etching characteristics and mechanism in HBr/Cl2/Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found that the TiO 2 etching rate in Cl2/Ar plasma is about 8 times faster than that in HBr/Ar plasma. In both HBr-rich (60% HBr + 20% Cl2 + 20% Ar) and Cl2-rich (20% HBr + 60% Cl2 + 20% Ar) plasmas, an increase in gas pressure (4-10 mTorr) results in a non-monotonic increase in TiO 2 etching rate, while the variation of input power (500-800 W) causes a monotonic acceleration of the etching process. Plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of active species on the etched surface. The model-based analysis of the TiO 2 etching kinetics shows a transitional regime of ion-assisted chemical reaction with domination of a chemical etching pathway. © 2012 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Cl 2, Etched surface, Etching characteristics, Etching process, Gas Pressure, HBr/Ar plasma, Inductively-coupled plasma(ICP), Input power, Langmuir probe, Model-based analysis